New 2D nano-material

A two-dimensional nano-material may be converted to nano-transistors used in high-speed electronics. The researchers say this may be the foundation of a new electronics revolution. Image: Image: Dr Daniel J White, Science FX A new 2D nano-material that encourages the free flow of electrons may be the foundation for a new electronics revolution. The material – made up of layers of crystal known as molybdenum oxides – has unique properties that encourage the free flow of electrons at ultra-high speeds. In a paper published in the January 2013 issue of Advanced Materials, the researchers explain how they adapted a revolutionary material known as graphene to create a new conductive nano-material. Graphene was created in 2004 by scientists in the UK and won its inventors a Nobel Prize in 2010. While graphene supports high-speed electrons, its physical properties prevent it from being used for high-speed electronics. The CSIRO's Dr Serge Zhuiykov said the new nano-material comprised layered sheets – similar to graphite layers that make up a pencil's core. "Within these layers, electrons can zip through at high speeds with minimal scattering," Dr Zhuiykov said. "The importance of our breakthrough is how quickly and fluently electrons – which conduct electricity – can flow through the new material." RMIT's Professor Kourosh Kalantar-Zadeh said the researchers were able to remove "roadblocks" that could obstruct the electrons, an essential step for developing high-speed electronics. "Instead of scattering when they hit roadblocks, as they would in conventional materials, they can simply pass through this new material and get through the structure faster," Professor Kalantar-Zadeh said. "Quite simply, if electrons can pass through a structure quicker, we can build smaller devices and transfer data at much higher speeds. "While more work needs to be done before we can develop actual gadgets using this new 2D nano-material, this breakthrough lays the foundation for a new electronics revolution, and we look forward to exploring its potential." In the paper titled 'Enhanced Charge Carrier Mobility in Two-Dimensional High Dielectric Molybdenum Oxide,' the researchers describe how they used a process known as "exfoliation" to create layers of the material ~11 nm thick. The material was manipulated to convert into a semiconductor, and nanoscale transistors were then created using molybdenum oxide. The result was electron mobility values of >1,100 cm2/Vs – exceeding the current industry standard for low dimensional silicon. The work, with RMIT doctoral researcher Sivacarendran Balendhran as the lead author, was supported by the CSIRO Sensors and Sensor Networks Transformational Capability Platform and the CSIRO Materials Science and Engineering Division. It was also a result of collaboration between researchers from Monash University, the University of California – Los Angeles (UCLA), CSIRO, Massachusetts Institute of Technology (MIT) and RMIT. Editor's Note: Original news release can be found here.